Infineon Makes World’s First 300mm Silicon Carbide Power Wafer
Infineon Technologies has achieved a significant milestone in semiconductor manufacturing, announcing the successful processing of 300mm (12-inch) silicon carbide (SiC) wafers into power semiconductor devices within a full-scale semiconductor fabrication plant environment.
This groundbreaking achievement marks a first for the industry and was accomplished using existing silicon (Si) semiconductor manufacturing equipment at Infineon’s Villach fab in Austria.
hitechexpert.top